P5NC70Z

STP5NC70Z

STMicroelectronics

P5NC70Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

P5NC70Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

P5NC70Z Datasheet (277.84 KB)

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Datasheet Details

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P5NC70Z

Manufacturer:

STMicroelectronics ↗

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277.84 KB

Description:

stp5nc70z.
STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1 N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC70Z.

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P5NC70Z Features

P5NC70Z General Description

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