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PD55008L-E - RF POWER transistor

Datasheet Summary

Description

The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12V in common source mode at frequencies up to 1GHz.

Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 8W with 17dB gain @ 500MHz / 12.5V.
  • Integrated ESD protection.
  • New leadless plastic package.
  • Supplied in tape and reel of 3K units.
  • In compliance with 2002/95/EC european directive.

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Datasheet preview – PD55008L-E

Datasheet Details

Part number PD55008L-E
Manufacturer STMicroelectronics
File Size 187.98 KB
Description RF POWER transistor
Datasheet download datasheet PD55008L-E Datasheet
Additional preview pages of the PD55008L-E datasheet.

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Full PDF Text Transcription

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PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■ New leadless plastic package ■ Supplied in tape and reel of 3K units ■ In compliance with 2002/95/EC european directive Description The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GHz. PD55008L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.
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