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PD55008S-E - RF POWER transistor

This page provides the datasheet information for the PD55008S-E, a member of the PD55008-E RF POWER transistor family.

Datasheet Summary

Description

The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies up to 1 GHz.

Features

  • Excellent thermal stability Common source configuration POUT = 8W with 17dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead).

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Datasheet preview – PD55008S-E

Datasheet Details

Part number PD55008S-E
Manufacturer STMicroelectronics
File Size 462.23 KB
Description RF POWER transistor
Datasheet download datasheet PD55008S-E Datasheet
Additional preview pages of the PD55008S-E datasheet.

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Full PDF Text Transcription

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PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 8W with 17dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008’s superior linearity performance makes it an ideal solution for car mobile radio.
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