* Order code RF3L05150CB4 Frequency 520 MHz VDD 28 V POUT 150 W Gain 23 dB Efficiency 60 %
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* In complia
RF3L05150CB4 Datasheet (1.65 MB)
RF3L05150CB4
1.65 MB
Rf power ldmos transistor.
RF3L05150CB4
Datasheet
150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
1 2
5
4
LBB
3
Pin connection
Pin
Connection
1
Drain A
2
Drain.
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