* Order code RF3L05200CB4 Frequency 650 MHz VDD 28 V POUT 200 W Gain 19 dB Efficiency 63%
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* In complian
RF3L05200CB4 Datasheet (1.66 MB)
RF3L05200CB4
1.66 MB
Rf power ldmos transistor.
RF3L05200CB4 Datasheet 200 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain.
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