* Order code RF3L05250CB4 Frequency 650 MHz VDD 28 V POUT 250 W Gain 18 dB Efficiency 62%
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* In complian
RF3L05250CB4 Datasheet (485.76 KB)
RF3L05250CB4
485.76 KB
Rf power ldmos transistor.
RF3L05250CB4
Datasheet
250 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
1 2
5
4
LBB
3
Pin connection
Pin
Connection
1
Drain A
2
Drain.
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