SGT65R65AL Datasheet - STMicroelectronics

SGT65R65AL e-mode PowerGaN transistor

The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency p.

SGT65R65AL Features

* 1 2 34 PowerFLAT 5x6 HV for PowerGaN D(5,6,7,8) Order code VDS RDS(on) max. ID SGT65R65AL 650 V 65 mΩ 25 A

* Enhancement mode normally off transistor

* Very high switching speed

* High power management capability

* Extremely low capacitances

* Kelvin

SGT65R65AL Datasheet (633.85 KB)