SGT105R70ILB - 700V 21.7A e-mode PowerGaN transistor
The SGT105R70ILB is a 700 V, 21.7 A e-mode PowerGaN transistor combined with a well established packaging technology.
The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficien
SGT105R70ILB Features
* Order code VDS RDS(on) max. SGT105R70ILB 700 V 105 mΩ
* Enhancement mode normally off transistor
* Very high switching speed
* High power management capability
* Extremely low capacitances
* Kelvin source pad for optimum gate driving
* Zero reve
