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SGT105R70ILB - 700V 21.7A e-mode PowerGaN transistor

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STMicroelectronics

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SGT105R70ILB 700V 21.7A e-mode PowerGaN transistor by STMicroelectronics - Datasheet Preview — Datasheet preview – SGT105R70ILB

Datasheet Details

Part number	SGT105R70ILB
Manufacturer	STMicroelectronics
File Size	449.17 KB
Description	700V 21.7A e-mode PowerGaN transistor
Datasheet	SGT105R70ILB Datasheet
Additional preview pages of the SGT105R70ILB datasheet.

Product details

Description

The SGT105R70ILB is a 700 V, 21.7 A e-mode PowerGaN transistor combined with a well established packaging technology.

Features

Order code VDS RDS(on) max. SGT105R70ILB 700 V 105 mΩ.
Enhancement mode normally off transistor.
Very high switching speed.
High power management capability.
Extremely low capacitances.
Kelvin source pad for optimum gate driving.
Zero reverse recovery charge.
ESD safeguard ID 21.7 A Series G-HEMT G(8).

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Published: May 27, 2025 |