SGT105R70ILB Datasheet - STMicroelectronics

SGT105R70ILB 700V 21.7A e-mode PowerGaN transistor

The SGT105R70ILB is a 700 V, 21.7 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficien.

SGT105R70ILB Features

* Order code VDS RDS(on) max. SGT105R70ILB 700 V 105 mΩ

* Enhancement mode normally off transistor

* Very high switching speed

* High power management capability

* Extremely low capacitances

* Kelvin source pad for optimum gate driving

* Zero reve

SGT105R70ILB-STMicroelectronics.pdf