SGT120R65AL Datasheet - STMicroelectronics

SGT120R65AL PowerGaN transistor

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency .

SGT120R65AL Features

* Order code VDS RDS(on) max. ID SGT120R65AL 650 V 120 mΩ 15 A

* Enhancement mode normally off transistor

* Very high switching speed

* High power management capability

* Extremely low capacitances

* Kelvin source pad for optimum gate driving

SGT120R65AL-STMicroelectronics.pdf