SGT120R65AL - PowerGaN transistor
The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology.
The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency
SGT120R65AL Features
* Order code VDS RDS(on) max. ID SGT120R65AL 650 V 120 mΩ 15 A
* Enhancement mode normally off transistor
* Very high switching speed
* High power management capability
* Extremely low capacitances
* Kelvin source pad for optimum gate driving
