SGT080R70ILB Datasheet - STMicroelectronics

SGT080R70ILB 700V 29A PowerGaN transistor

The SGT080R70ILB is a 700 V, 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency.

SGT080R70ILB Features

* 5 4 Order code VDS RDS(on) max. ID TAB 1 8 SGT080R70ILB 700 V 80 mΩ 29 A

* Enhancement mode normally off transistor 4 5 PowerFLAT 8x8 HV for PowerGaN

* Very high switching speed

* High power management capability

* Extremely low capacitances

SGT080R70ILB-STMicroelectronics.pdf