STB12N60DM2AG

N-channel Power MOSFET

STMicroelectronics

STB12N60DM2AG Features

* Order code STB12N60DM2AG VDS @ TJ max. 650 V RDS(on ) max. 430 mΩ ID 10 A

* AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggednes

STB12N60DM2AG General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift.

STB12N60DM2AG Datasheet (417.57 KB)

STB12N60DM2AG Datasheet Preview — Preview of STB12N60DM2AG PDF

Datasheet Details

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STB12N60DM2AG

Manufacturer:

STMicroelectronics ↗

File Size:

417.57 KB

Description:

N-channel power mosfet.
STB12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1.

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STB12N60DM2AG N-channel Power MOSFET STMicroelectronics

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STB12N60DM2AG Features

STB12N60DM2AG General Description

Datasheet Details

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STB12N60DM2AG Distributor