STB12N60DM2AG N-channel Power MOSFET

STMicroelectronics

Description

STB12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1.
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

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Datasheet Specifications

Part number: STB12N60DM2AG
Manufacturer: STMicroelectronics ↗
File Size: 417.57 KB
Datasheet: STB12N60DM2AG-STMicroelectronics.pdf
Description: N-channel Power MOSFET

Features

* Order code STB12N60DM2AG VDS @ TJ max. 650 V RDS(on ) max. 430 mΩ ID 10 A
* AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on-resistance
* 100% avalanche tested
* Extremely high dv/dt ruggednes

STB12N60DM2AG Distributors

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STB12N60DM2AG N-channel Power MOSFET STMicroelectronics

STMicroelectronics STB12N60DM2AG-like datasheet