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STB12N60DM2AG - N-channel Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	STB12N60DM2AG
Manufacturer	STMicroelectronics ↗
File Size	417.57 KB
Description	N-channel Power MOSFET
Datasheet	STB12N60DM2AG-STMicroelectronics.pdf

STB12N60DM2AG Product details

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

Features

Order code STB12N60DM2AG VDS @ TJ max. 650 V RDS(on ) max. 430 mΩ ID 10 A.
AEC-Q101 qualified.
Fast-recovery body diode.
Extremely low gate charge and input capacitance.
Low on-resistance.
100% avalanche tested.
Extremely high dv/dt ruggedness.
Zener-protected.

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Published: Mar 1, 2023 |