STB120N4F6 Datasheet - STMicroelectronics

STB120N4F6 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. 6 $0Y Order codes STB120N4F6 STD120N4F6 Table 1. Device summary Marking P.

STB120N4F6 Features

* Order codes STB120N4F6 STD120N4F6 VDS 40 V 40 V RDS(on) max. 4 mΩ 4 mΩ ID 80 A 80 A

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Figu

STB120N4F6-STMicroelectronics.pdf