STB120N4F6

N-channel Power MOSFET

STMicroelectronics

STB120N4F6 Features

* Order codes STB120N4F6 STD120N4F6 VDS 40 V 40 V RDS(on) max. 4 mΩ 4 mΩ ID 80 A 80 A

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Figu

STB120N4F6 General Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. 6 $0Y Order codes STB120N4F6 STD120N4F6 Table 1. Device summary Marking P.

STB120N4F6 Datasheet (1.04 MB)

STB120N4F6 Datasheet Preview — Preview of STB120N4F6 PDF

Datasheet Details

Part number:

STB120N4F6

Manufacturer:

STMicroelectronics ↗

File Size:

1.04 MB

Description:

N-channel power mosfet.
STB120N4F6, STD120N4F6 Automotive-grade N-channel 40 V, 3.5 mΩ typ., 80 A STripFET™ F6 Power MOSFETs in DPAK and D²PAK packages Datasheet - production.

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STB120N4F6 N-channel Power MOSFET STMicroelectronics

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STB120N4F6 Features

STB120N4F6 General Description

Datasheet Details

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