STB120N4F6 - N-channel Power MOSFET
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
6 $0Y Order codes STB120N4F6 STD120N4F6 Table 1.
Device summary Marking P
STB120N4F6 Features
* Order codes STB120N4F6 STD120N4F6 VDS 40 V 40 V RDS(on) max. 4 mΩ 4 mΩ ID 80 A 80 A
* Designed for automotive applications and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss Figu
