STB120N4LF6

N-channel Power MOSFET

STMicroelectronics

STB120N4LF6 Features

* Order codes STB120N4LF6 STD120N4LF6 VDSS 40 V 40 V RDS(on) max 4.0 mΩ 4.0 mΩ ID 80 A 80 A

* Logic level drive

* 100% avalanche tested Application

* Switching applications

* Automotive Description This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s

STB120N4LF6 General Description

This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Order .

STB120N4LF6 Datasheet (885.70 KB)