STB12NM50-2 - N-Channel MOSFET

INCHANGE

STB12NM50-2 Datasheet Preview — Preview of STB12NM50-2 PDF

Datasheet Details

Part number	STB12NM50-2
Manufacturer	INCHANGE
File Size	264.78 KB
Description	N-Channel MOSFET
Datasheet	STB12NM50-2-INCHANGE.pdf

STB12NM50-2 Product details

Description

Low Drain-Source On-Resistance APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±30 V 12 A 48 A 160 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance

Features

Drain Current.
ID= 12A@ TC=25℃.
Drain Source Voltage- : VDSS= 500V(Min).
Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 4, 2020 |