Datasheet Details
- Part number
- STB100N6F7-2
- Manufacturer
- INCHANGE
- File Size
- 245.86 KB
- Datasheet
- STB100N6F7-2-INCHANGE.pdf
- Description
- N-Channel MOSFET
STB100N6F7-2 Description
Isc N-Channel MOSFET Transistor *.
STB100N6F7-2 Features
* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
STB100N6F7-2 Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-ContinuousTc=25℃
100
A
IDM
Drain Current-Single Pulsed
400
A
PD
Total Dissipation @TC=25℃
125
W
Tch
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