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STB11NM60N - N-Channel MOSFET

STB11NM60N Description

isc N-Channel Mosfet Transistor *.

STB11NM60N Features

* Drain Current ID= 10A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STB11NM60N Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 10 A IDM Pulse Drain Current 40 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max. Opera

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Datasheet Details

Part number
STB11NM60N
Manufacturer
INCHANGE
File Size
263.11 KB
Datasheet
STB11NM60N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STB11NM60N-like datasheet