STB11NK40Z Datasheet - ST Microelectronics

STB11NK40Z N-CHANNEL PowerMESH MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

www.DataSheet4U.com STP11NK40Z - STP11NK40ZFP STB11NK40Z N-CHANNEL 400V - 0.49Ω - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP11NK40Z STP11NK40ZFP STB11NK40Z s s s s s s VDSS 400 V 400 V 400 V RDS(on) < 0.55 Ω < 0.55 Ω < 0.55 Ω ID 9A 9A 9A Pw 110 W 30 W 110 W 3 1 2 TYPICAL RDS(on) = 0.49 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 D2PAK.

STB11NK40Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STB11NK40Z_STMicroelectronics.pdf