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STB11NM60-1 Datasheet - INCHANGE

STB11NM60-1, N-Channel MOSFET

isc N-Channel Mosfet Transistor *.
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STB11NM60-1-INCHANGE.pdf

Preview of STB11NM60-1 PDF

Datasheet Details

Part number:

STB11NM60-1

Manufacturer:

INCHANGE

File Size:

307.49 KB

Description:

N-Channel MOSFET

Features

* Drain Current ID= 11A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 11 A IDM Pulse Drain Current 44 A Ptot Total Dissipation@TC=25℃ 160 W Tj Max. Oper

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