STB11NM80 Datasheet - ST Microelectronics

STB11NM80 N-CHANNEL MOSFET

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Ut.

STB11NM80 Features

* Order codes VDSS RDS(on) max RDS(on)

* Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω

* nC 11 A

* Low input capacitance and gate charge

* Low gate input resistance

* Best RDS(on)

* Qg in the industry Applications

* Switching applications D

STB11NM80_STMicroelectronics.pdf