STB11NM80 - N-CHANNEL MOSFET
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics.
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STB11NM80 Features
* Order codes VDSS RDS(on) max RDS(on)
* Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω
* nC 11 A
* Low input capacitance and gate charge
* Low gate input resistance
* Best RDS(on)
* Qg in the industry Applications
* Switching applications D
