Datasheet4U Logo Datasheet4U.com

STB11NM60N-1 - N-Channel MOSFET

STB11NM60N-1 Description

isc N-Channel Mosfet Transistor *.

STB11NM60N-1 Features

* Drain Current ID= 10A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STB11NM60N-1 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 10 A IDM Pulse Drain Current 40 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max. Opera

📥 Download Datasheet

Preview of STB11NM60N-1 PDF
datasheet Preview Page 2

Datasheet Details

Part number
STB11NM60N-1
Manufacturer
INCHANGE
File Size
307.72 KB
Datasheet
STB11NM60N-1-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • STB11NM60A-1 - N-Channel MOSFET (ST Microelectronics)
  • STB11NM60FD - N-Channel MOSFET (ST Microelectronics)
  • STB11NM60FD-1 - N-Channel MOSFET (ST Microelectronics)
  • STB11NM60T4 - N-CHANNEL Power MOSFET (STMicroelectronics)
  • STB11NM80 - N-CHANNEL MOSFET (ST Microelectronics)
  • STB11NB40 - N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET (ST Microelectronics)
  • STB11NB40-1 - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
  • STB11NK40Z - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE STB11NM60N-1-like datasheet