Datasheet Details
- Part number
- STB100N10F7
- Manufacturer
- INCHANGE
- File Size
- 199.07 KB
- Datasheet
- STB100N10F7-INCHANGE.pdf
- Description
- N-Channel MOSFET
STB100N10F7 Description
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB100N10F7 *.
STB100N10F7 Features
* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
STB100N10F7 Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=125℃
Drain Current-Single Pulsed
±20
80 62
320
PD
Total Dissipation @TC=25℃
120
Tch
Max. Operating
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