Datasheet4U Logo Datasheet4U.com

STB11NM60FD - N-Channel MOSFET

STB11NM60FD Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB11NM60FD *.

STB11NM60FD Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STB11NM60FD Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 11 7 44 PD Total Dissipation @TC=25℃ 160 Tch Max. Operating Ju

📥 Download Datasheet

Preview of STB11NM60FD PDF
datasheet Preview Page 2

Datasheet Details

Part number
STB11NM60FD
Manufacturer
INCHANGE
File Size
199.17 KB
Datasheet
STB11NM60FD-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • STB11NM60FD-1 - N-Channel MOSFET (ST Microelectronics)
  • STB11NM60A-1 - N-Channel MOSFET (ST Microelectronics)
  • STB11NM60T4 - N-CHANNEL Power MOSFET (STMicroelectronics)
  • STB11NM80 - N-CHANNEL MOSFET (ST Microelectronics)
  • STB11NB40 - N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET (ST Microelectronics)
  • STB11NB40-1 - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
  • STB11NK40Z - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
  • STB11NK50Z - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE STB11NM60FD-like datasheet