STB11NB40-1 Datasheet - ST Microelectronics

STB11NB40-1 N-CHANNEL PowerMESH MOSFET

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

STB11NB40-1 Features

* Type STB11NB40 STB11NB40-1 VDSS 400 V 400 V RDS(on) < 0.55 Ω < 0.55 Ω ID 10.7 A 10.7 A STB11NB40 STB11NB40-1 Figure 1. Package FEATURES SUMMARY

* TYPICAL RDS(on) = 0.48 Ω

* EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE

STB11NB40-1_STMicroelectronics.pdf