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STB11N65M5 - N-Channel MOSFET

STB11N65M5 Description

isc N-Channel MOSFET Transistor *.

STB11N65M5 Features

* With TO-263(D2PAK) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STB11N65M5 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous;@Tc=25℃ Tc=100℃ 9 5.6 A IDM Drain Current-Single Pulsed 36 A PD Total Diss

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Datasheet Details

Part number
STB11N65M5
Manufacturer
INCHANGE
File Size
246.62 KB
Datasheet
STB11N65M5-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STB11N65M5-like datasheet