STB100N6F7 - N-CHANNEL POWER MOSFET
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
6 $0Y Order code STB100N6F7 Table 1.
Device
STB100N6F7 Features
* 7$% Order code VDS RDS(on) max. ID PTOT STB100N6F7 60 V 5.6 mΩ 100A 125 W '3$. Figure 1. Internal schematic diagram ' 7$%
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* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High ava
