STB100N6F7 - N-CHANNEL POWER MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STB100N6F7
Manufacturer	STMicroelectronics
File Size	561.79 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STB100N6F7 Datasheet
Additional preview pages of the STB100N6F7 datasheet.

Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

7$% Order code VDS RDS(on) max. ID PTOT STB100N6F7 60 V 5.6 mΩ 100A 125 W '3$. Figure 1. Internal schematic diagram '7$%.
.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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Published: Jan 22, 2019 |