STB100N6F7 Datasheet - STMicroelectronics

STB100N6F7 N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order code STB100N6F7 Table 1. Device .

STB100N6F7 Features

* 7$% Order code VDS RDS(on) max. ID PTOT STB100N6F7 60 V 5.6 mΩ 100A 125 W '3$. Figure 1. Internal schematic diagram '7$%

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High ava

STB100N6F7-STMicroelectronics.pdf