STB100N6F7 N-CHANNEL POWER MOSFET

STMicroelectronics

Description

STB100N6F7 N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7 Power MOSFET in a D²PAK package Datasheet - production data .
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Datasheet Specifications

Part number: STB100N6F7
Manufacturer: STMicroelectronics ↗
File Size: 561.79 KB
Datasheet: STB100N6F7-STMicroelectronics.pdf
Description: N-CHANNEL POWER MOSFET

Features

* 7$% Order code VDS RDS(on) max. ID PTOT STB100N6F7 60 V 5.6 mΩ 100A 125 W '3$. Figure 1. Internal schematic diagram '7$%
*
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High ava

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STB100N6F7 N-CHANNEL POWER MOSFET STMicroelectronics

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