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STB100N6F7 Datasheet - STMicroelectronics

STB100N6F7 - N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

6  $0Y Order code STB100N6F7 Table 1.

Device

STB100N6F7 Features

* 7$% Order code VDS RDS(on) max. ID PTOT STB100N6F7 60 V 5.6 mΩ 100A 125 W   '3$. Figure 1. Internal schematic diagram ' 7$%

* 

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High ava

STB100N6F7-STMicroelectronics.pdf

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Datasheet Details

Part number:

STB100N6F7

Manufacturer:

STMicroelectronics ↗

File Size:

561.79 KB

Description:

N-channel power mosfet.

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