STB10N60M2 - N-CHANNEL POWER MOSFET
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology.
Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters
STB10N60M2 Features
* Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2
* Extremely low gate charge
* Excellent output capacitance (Coss) profile
* 100% avalanche tested
* Zener-protected ID 7.5 A Package D²PAK DPAK TO-220 Applications
