STB10N03 - N-Channel Enhancement Mode Field Effect Transistor
STB10N03 Features
* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 1
