* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 1
STB10N03
SamHop Microelectronics
99.34 KB
N-channel enhancement mode field effect transistor.
STB10N03Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
.
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