STB10NA40 Datasheet - ST Microelectronics

STB10NA40 N-CHANNEL POWER MOSFET

www.DataSheet4U.com STB10NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB10NA40 n n n n n n n n V DSS 400 V R DS(on ) < 0.55 Ω ID 10 A n TYPICAL RDS(on) = 0.46 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN .

STB10NA40_STMicroelectronics.pdf