STB100N10F7

N-channel Power MOSFET

STMicroelectronics

STB100N10F7 Features

* Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High

STB100N10F7 General Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STB100N10F7 STD100N10F7 STF100N10F.

STB100N10F7 Datasheet (666.24 KB)

STB100N10F7 Datasheet Preview — Preview of STB100N10F7 PDF

Datasheet Details

Part number:

STB100N10F7

Manufacturer:

STMicroelectronics ↗

File Size:

666.24 KB

Description:

N-channel power mosfet.
STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, .

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STB100N10F7 N-channel Power MOSFET STMicroelectronics

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STB100N10F7 Features

STB100N10F7 General Description

Datasheet Details

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