STB100N10F7 - N-channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STB100N10F7
Manufacturer	STMicroelectronics
File Size	666.24 KB
Description	N-channel Power MOSFET
Datasheet	STB100N10F7 Datasheet
Additional preview pages of the STB100N10F7 datasheet.

Product details

Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness Package D2PAK DPAK TO-220FP I2PAK TO-220.

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Published: Nov 8, 2015 |