STB100N10F7 Datasheet - STMicroelectronics

STB100N10F7 N-channel Power MOSFET

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STB100N10F7 STD100N10F7 STF100N10F.

STB100N10F7 Features

* Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High

STB100N10F7 Datasheet (666.24 KB)