* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 60A R DS(ON) (m Ω) Max 9 @ VGS=10V 11 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless oth
STB432S
SamHop Microelectronics
249.25 KB
N-channel logic enhancement mode field effect transistor.
www.DataSheet4U.com STB/P432S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V D.
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