* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 65A R DS(ON) (m Ω) Max 8 @ VGS=10V 11.5 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE Symbol VDS VGS ID IDM EAS PD TJ, TST
STB440S
SamHop Microelectronics
277.88 KB
N-channel mosfet.
Green Product
STB/P440S
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V D.
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