Description
The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure.
Features
- Type STB7N52K3 STD7N52K3 STF7N52K3 STP7N52K3 VDSS 525 V 525 V 525 V 525 V RDS(on) max < 0.98 Ω < 0.98 Ω < 0.98 Ω ID 6.3 A 6.3 A 6.3 A Pw
3
3
90 W 90 W 25 W 90 W
1
1
D²PAK
DPAK
< 0.98 Ω 6.3 A(1)
1. Limited by package.
- 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1.
3
3 1 2
TO-220
1
2
TO-220FP
Internal schematic diag.
STB7N52K3_STMicroelectronics.pdf
