STB8N65M5 Datasheet - STMicroelectronics

STB8N65M5 N-Channel Power MOSFET

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and supe.

STB8N65M5 Features

* Order codes VDS @ TJ max. RDS(on) max. ID STB8N65M5 STD8N65M5 710 V 0.60 Ω 7A STF8N65M5

* Extremely low RDS(on)

* Low gate charge and input capacitance

* Excellent switching performance

* 100% avalanche tested PTOT 70 W 70 W 25 W G(1) S(3) Applications

STB8N65M5 Datasheet (694.34 KB)