STB8NM60 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor .

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Datasheet Specifications

Part number: STB8NM60
Manufacturer: INCHANGE
File Size: 264.57 KB
Datasheet: STB8NM60-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 8A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Tempe

STB8NM60 Distributors

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STB8NM60 N-Channel MOSFET INCHANGE

INCHANGE STB8NM60-like datasheet