STB8NM60N Datasheet (STMicroelectronics)

STB8NM60N, N-CHANNEL Power MOSFET

duThis series of devices implements second rogeneration MDmesh™ technology.

This Prevolutionary Power MOSFET associates a new tevertical structure to the Company’s strip layout to leyield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most Obsodemanding hi

STB8NM60N Features

* Type VDSS (@Tjmax) RDS(on) max ID STB8NM60N t(s)STD8NM60N cSTD8NM60N-1 uSTF8NM60N rodSTP8NM60N 650 V 650 V 650 V 650 V 650 V < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω 7A 7A 7A 7 A(1) 7A P1. Limited only by maximum temperature allowed te

* 100% avalanche tested le

* Low input capac