STB8NA50 Datasheet (STMicroelectronics) - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STB8NA50, N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STB8NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB8NA50 n n n n n n n n V DSS 500 V R DS(on ) < 0.85 Ω ID 8 A n TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)