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STD110N8F6 Datasheet - STMicroelectronics

STD110N8F6 N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6  Order code STD110N8F6 $0Y Table 1. Device summary Marking Package 110N8F6 DPAK Packing Tube .

STD110N8F6 Features

* Order code VDS RDS(on)max ID PTOT 7$% STD110N8F6 80 V 0.0065 Ω 80 A 167 W   '3$. Figure 1. Internal schematic diagram ' 7$%

* 

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Applications

STD110N8F6-STMicroelectronics.pdf

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Datasheet Details

Part number:

STD110N8F6

Manufacturer:

STMicroelectronics ↗

File Size:

605.05 KB

Description:

N-channel power mosfet.

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TAGS

STD110N8F6 STD110N8F6 N-CHANNEL POWER MOSFET STMicroelectronics

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