STD11N60M2-EP Datasheet - STMicroelectronics

N-channel Power MOSFET

STD11N60M2-EP Features

* Order code VDS STD11N60M2-EP 600 V

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected RDS(on) max. 0.595 Ω ID 7.5 A Applications

* Switching a

STD11N60M2-EP General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su.

STD11N60M2-EP Datasheet (350.82 KB)

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Datasheet Details

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STD11N60M2-EP

Manufacturer:

STMicroelectronics ↗

File Size:

350.82 KB

Description:

N-channel power mosfet.
STD11N60M2-EP Datasheet N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475.

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STD11N60M2-EP N-channel Power MOSFET STMicroelectronics

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STD11N60M2-EP Features

STD11N60M2-EP General Description

Datasheet Details

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