STD11NM50N Datasheet, Mosfet, STMicroelectronics

STD11NM50N Features

• Mosfet TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. STD11NM50N 500 V 470 mΩ
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate in

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STD11NM50N

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STMicroelectronics ↗

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📄 Datasheet

Description:

N-channel power mosfet. S(3) This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power

STD11NM50N Application

• Applications ID 8.5 A
• Switching applications G(1) Description S(3) This device is an N-channel Power MOSFET developed using the second

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STD11NM50N

STMicroelectronics

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