STD11NM50N

N-channel Power MOSFET

STMicroelectronics

STD11NM50N Features

* TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. STD11NM50N 500 V 470 mΩ

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications ID 8.5 A

* Switching applications G(1) Description S(3) This device is an

STD11NM50N General Description

S(3) This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical AM01475v1_noZen structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefo.

STD11NM50N Datasheet (736.44 KB)