STD11NM60N Datasheet - ST Microelectronics

STD11NM60N N-channel Power MOSFET

This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding hig.

STD11NM60N Features

* Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on)

STD11NM60N_STMicroelectronics.pdf