STD11N60DM2

N-Channel Power MOSFET

STMicroelectronics

STD11N60DM2 Features

* Order code VDS @ TJmax RDS(on)max. ID STD11N60DM2 650 V 420 mΩ 10 A

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected P

STD11N60DM2 General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif.

STD11N60DM2 Datasheet (500.11 KB)

STD11N60DM2 Datasheet Preview — Preview of STD11N60DM2 PDF

Datasheet Details

Part number:

STD11N60DM2

Manufacturer:

STMicroelectronics ↗

File Size:

500.11 KB

Description:

N-channel power mosfet.
STD11N60DM2 Datasheet N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) NG1D2TS3Z Fe.

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STD11N60DM2 N-Channel Power MOSFET STMicroelectronics

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STD11N60DM2 Features

STD11N60DM2 General Description

Datasheet Details

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