STD11N60DM2 Datasheet - STMicroelectronics

STD11N60DM2 N-Channel Power MOSFET

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif.

STD11N60DM2 Features

* Order code VDS @ TJmax RDS(on)max. ID STD11N60DM2 650 V 420 mΩ 10 A

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected P

STD11N60DM2-STMicroelectronics.pdf