Part number:
STD150N3LLH6
Manufacturer:
File Size:
973.60 KB
Description:
N-channel mosfet.
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
' 3 !-V Table 1.
Device summary Marking 150N3LLH6 150N3LLH6 150N3LLH6 Package DPAK TO-
STD150N3LLH6 Features
* Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6
* VDSS 30 V 30 V 30 V RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω ID 80 A 80 A 80 A 3 1 3 2 1 DPAK IPAK RDS(on)
* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 1
STD150N3LLH6_STMicroelectronics.pdf
Datasheet Details
STD150N3LLH6
973.60 KB
N-channel mosfet.
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