STD15N60M2-EP

N-channel Power MOSFET

STMicroelectronics

STD15N60M2-EP Features

* Order code VDS @ TJmax RDS(on) max. ID STD15N60M2-EP 650 V 0.378 Ω 11 A

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected Applications

STD15N60M2-EP General Description

AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, r.

STD15N60M2-EP Datasheet (534.48 KB)