so roThe STD150NH02L utilizes the latest advanced b Pdesign rules of ST’s proprietary STripFET™ - O tetechnology.
This novel 0.6µ process utilizes also ) leunique metallization techniques that couple to a "bondless" assembly technique result in t(s sooutstanding performance with standard DPAK c bout
STD150NH02L_STMicroelectronics.pdf
Datasheet Details
STD150NH02L-1, STD150NH02L
494.48 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: STD150NH02L-1, STD150NH02L.
Please refer to the document for exact specifications by model.
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