STD47N10F7AG - N-CHANNEL POWER MOSFET

STMicroelectronics

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Datasheet Details

Part number	STD47N10F7AG
Manufacturer	STMicroelectronics
File Size	654.79 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STD47N10F7AG-STMicroelectronics.pdf

STD47N10F7AG Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code VDS STD47N10F7AG 100 V RDS(on) max. 18 mΩ ID PTOT 45 A 60 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3).
AEC-Q101 qualified.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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Published: Jan 22, 2019 |