STD4NK60Z-1 Datasheet (STMicroelectronics)

STD4NK60Z-1, N-CHANNEL Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements

STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1 STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK60Z www.DataSheet4U.cSoTmP4NK60ZFP STB4NK60Z STB4NK60Z-1 STD4NK60Z STD4NK60Z-1 600 V 600 V 600 V 600 V 600 V 600 V <2Ω <2Ω <2Ω < 2Ω <2Ω <2Ω 4 A 70 W 4 A 25 W 4 A 70 W 4 A 70 W 4 A 70 W 4 A 70 W s TYPICAL RDS(on) = 1.76 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED

STD4NK60Z-1 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta