STD5NM60-1

N-channel Power MOSFET

STMicroelectronics

STD5NM60-1 Features

* TAB Order code VDS RDS(on) max. ID STD5NM60-1 600 V 1.0 Ω 5A 3 2 1

* 100% avalanche tested

* Low input capacitance and gate charge IPAK

* Low gate input resistance D(2, TAB) Applications

* Switching applications G(1) S(3) Description AM01475v1_noZe

STD5NM60-1 General Description

AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low onresistance, high dv/dt, and excellent avalanche charact.

STD5NM60-1 Datasheet (580.46 KB)