STD5NM60T4

N-channel Power MOSFET

STMicroelectronics

STD5NM60T4 Features

* TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD5NM60T4 600 V 1.0 Ω 5A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications

* Switching applications G(1) Description S(3) This N-channel Power

STD5NM60T4 General Description

S(3) This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with AM01475v1_noZen the company's PowerMESH horizontal layout. This device offers extremely low on- resistance, high dv/dt, and excellent avalanc.

STD5NM60T4 Datasheet (831.39 KB)