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STE250N06 Datasheet - STMicroelectronics

STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE250N06 s s VDSS 60 V R DS(on) < 0.004 Ω ID 250 A 4 3 s s s s s s s HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH80N06 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH.

STE250N06_STMicroelectronics.pdf

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Datasheet Details

Part number:

STE250N06

Manufacturer:

STMicroelectronics ↗

File Size:

228.07 KB

Description:

N - channel enhancement mode power mos transistor.

STE250N06 Distributor

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STE250N06 STE250N06 CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics