STFI20NM65N

N-channel Power MOSFET

STMicroelectronics

STFI20NM65N Features

* 1 2 3 I 2PAKFP (TO-281) Order code VDSS @Tjmax STFI20NM65N 710 V RDS(on) max. 0.270 Ω ID 15 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications

* Switching applications Figure 1. Internal schematic diagram

STFI20NM65N General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STFI20NM65N Datasheet (777.45 KB)